Summary Resistive random-access memory is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. This technology bears some similarities to conductive-bridging RAM (CBRAM), and phase-change memory (PCM). Market Segment as follows: By Type 180 nm 40nm Others By Application Computer IoT Consumer Electronics Medical Others By Company PSCS Adesto Crossbar Fujitsu Intel Samsung Electronics TSMC Micron SK Hynix SMIC 4DS Memory Weebit Nano The main contents of the report including: Section 1: Product definition, type and application, global and China market overview; Section 2: Global and China Market competition by company; Section 3: Global and China sales revenue, volume and price by type; Section 4: Global and China sales revenue, volume and price by application; Section 5: China export and import; Section 6: Company information, business overview, sales data and product specifications; Section 7: Industry chain and raw materials; Section 8: SWOT and Porter's Five Forces; Section 9: Conclusion.
Table of Contents 1 Market Overview 1.1 Market Segment Overview 1.1.1 Product Definition 1.1.2 Market by Type 1.1.2.1 180 nm 1.1.2.2 40nm 1.1.2.3 Others 1.1.3 Market by Application 1.1.3.1 Computer 1.1.3.2 IoT 1.1.3.3 Consumer Electronics 1.1.3.4 Medical 1.1.3.5 Others 1.