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Global and Regional IGBT Market Research Report 2017

Summary IGBT is short for Insulated Gate Bipolar Transistor. It is a power transistor with a MOS structure for an input part and a bipolar one for an output part. Suitable for high voltage and high current, it is capable of controlling high power with less drive power. Market Segment as follows: By Region Asia-Pacific North America Europe South America Middle East & Africa By Type IGBT Module Discrete IGBT By Application Industrial Drives Consumer Automotive Renewables Traction Others By Company Mitsubishi Electric Infineon Technologies Fuji Electric SEMIKRON Hitachi ABB ON Semiconductor (Fairchild Semiconductor) Renesas Electronics CRRC Toshiba STMicroelectronics ROHM Semiconductor Starpower Semiconductor The main contents of the report including: Section 1: Product definition, type and application, global and regional market overview; Section 2: Global and regional Market competition by company; Section 3: Global and regional sales revenue, volume and price by type; Section 4: Global and regional sales revenue, volume and price by application; Section 5: Regional export and import; Section 6: Company information, business overview, sales data and product specifications; Section 7: Industry chain and raw materials; Section 8: SWOT and Porter's Five Forces; Section 9: Conclusion.
Table of Contents 1 Market Overview 1.1 Market Segment Overview 1.1.1 Product Definition 1.1.2 Market by Type 1.1.2.1 IGBT Module 1.1.2.2 Discrete IGBT 1.1.3 Market by Application 1.1.3.1 Industrial Drives 1.1.3.2 Consumer 1.1.3.3 Automotive 1.1.3.4 Renewables 1.1.3.5 Traction
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About this Report
Report ID 169851
Category
  • Electronics
Published on 12-Oct
Number of Pages 122
Publisher Name HeyReport
Editor Rating
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