Summary APD Avalanche Photodiode (APD) is a highly sensitive semiconductor electronic device that exploits the photoelectric effect to convert light to electricity. APDs can be thought of as photodetectors that provide a built-in first stage of gain through avalanche multiplication. From a functional standpoint, they can be regarded as the semiconductor analog to photomultipliers. By applying a high reverse bias voltage, APDs show an internal current gain effect due to impact ionization. However, some silicon APDs employ alternative doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied before breakdown is reached and hence a greater operating gain. In general, the higher the reverse voltage the higher the gain. Market Segment as follows: By Type Silicon Materials Germanium Materials InGaAs Materials Others By Application Industrial Medical Mobility Others By Company First-sensor Hamamatsu Kyosemi Corporation LUNA Excelitas Osi optoelectronics Edmund Optics GCS SiFotonics The main contents of the report including: Section 1: Product definition, type and application, global and United States market overview; Section 2: Global and United States Market competition by company; Section 3: Global and United States sales revenue, volume and price by type; Section 4: Global and United States sales revenue, volume and price by application; Section 5: United States export and import; Section 6: Company information, business overview, sales data and product specifications; Section 7: Industry chain and raw materials; Section 8: SWOT and Porter's Five Forces; Section 9: Conclusion.
Table of Contents 1 Market Overview 1.1 Market Segment Overview 1.1.1 Product Definition 1.1.2 Market by Type 1.1.2.1 Silicon Materials 1.1.2.2 Germanium Materials 1.1.2.3 InGaAs Materials 1.1.2.4 Others 1.1.3 Market by Application 1.1.3.1 Industrial 1.1.3.2 Medical 1.1.3.3 Mobility