Summary The global Discrete Power Device market is estimated to reach 5.3 Billion USD in 2017. The objective of report is to define, segment, and project the market on the basis of type, application, and region, and to describe the content about the factors influencing market dynamics, policy, economic, technology and market entry etc. Based on products type, the report describes major products type share of regional market. Products mentioned as follows: By Type Transistor Diodes Thyristors Based on region, the report describes major regions market by products and application. Regions mentioned as follows: North America Europe China Japan & Korea Southeast Asia Based on Application, the report describes major Application share of regional market. Application mentioned as follows: Automotive & Transportation Industrial Consumer Communication Leading vendors in the market are included based on profile, business performance etc. Vendors mentioned as follows: Infineon Technologies ON Semiconductor Mitsubishi Electric Toshiba STMicroelectronics Vishay Intertechnology Fuji Electric Renesas Electronics ROHM Semiconductor Nexperia Microsemi IXYS Corporation
Table of Contents 1 Market Overview 1.1 Objectives of Research 1.1.1 Definition 1.1.2 Specifications 1.2 Market Segment 1.2.1 by Type 1.2.1.1 Transistor 1.2.1.2 Diodes 1.2.1.3 Thyristors 1.2.2 by Application 1.2.2.1 Automotive & Transportation 1.2.2.2 Industrial 1.2.2.3 Consumer
