The report focuses on the GaN Devices market size, segment size (mainly covering product type, application, and geography), competitor landscape, recent status, and development trends. Furthermore, the report provides strategies for companies to overcome threats posed by COVID-19. Technological innovation and advancement will further optimize the performance of the product, enabling it to acquire a wider range of applications in the downstream market. Moreover, customer preference analysis, market dynamics (drivers, restraints, opportunities), new product release, impact of COVID-19, regional conflicts and carbon neutrality provide crucial information for us to take a deep dive into the GaN Devices market. Major Players in the GaN Devices market are: Qorvo International Quantum Epitaxy (IQE) Toshiba Infineon Technologies RF Micro Devices Aixtron NXP Semiconductors Fujitsu EPIGAN NTT Advanced Technology Cree Incorporated Avago Technologies Nichia Mitsubishi Chemical Texas Instruments Panasonic Semiconductors GaN Systems OSRAM Opto Semiconductors AZZURO Semiconductors On the basis of types, the GaN Devices market is primarily split into: Power Semiconductor Opto Semiconductor Other On the basis of applications, the market covers: Consumer Electronics Automotive & Transportation Industrial Use Aerospace and Defense Other Major Regions or countries covered in this report: United States Europe China Japan India Southeast Asia Latin America Middle East and Africa Others Years considered for this report: Historical Years: 2017-2021 Base Year: 2021 Estimated Year: 2022 Forecast Period: 2022-2029
Table of Content 1 GaN Devices Market Overview 1.1 Product Overview and Scope of GaN Devices Market 1.2 GaN Devices Market Segment by Type 1.2.1 Global GaN Devices Market Sales and CAGR (%) Comparison by Type (2017-2029) 1.3 Global GaN Devices Market Segment by Application 1.3.1 GaN Devices Market Consumption (Sales) Comparison by Application (2017-2029) 1.4 Global GaN Devices Market, Region Wise
