GaN epitaxial wafers are grown by HVPE or MOCVD method, can be used as an ideal and excellent substrate for high frequency, high speed and high power device. Market Analysis and Insights: Global GaN Epitaxial Wafers Market The global GaN Epitaxial Wafers market was valued at US$ XX in 2020 and will reach US$ XX million by the end of 2027, growing at a CAGR of XX% during 2022-2027. Global GaN Epitaxial Wafers Scope and Market Size The global GaN Epitaxial Wafers market is segmented by company, region (country), by Type, and by Application. Players, stakeholders, and other participants in the global GaN Epitaxial Wafers market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on sales, revenue and forecast by region (country), by Type and by Application for the period 2016-2027. Segment by Type MOCVD Method MBE Method Segment by Application Electric Vehicles 5G Communications High-Speed Rails Radars Robotics Others The GaN Epitaxial Wafers market is analysed and market size information is provided by regions (countries). Segment by Application, the GaN Epitaxial Wafers market is segmented into North America, Europe, China, Japan, Southeast Asia, India and Other Regions. By Company Mitsubishi Chemical Corporation EpiGaN SCIOCS GLC Semiconductor Group IGSS GaN Homray Material Technology POWDEC K.K. Nitride Semiconductors Co.,Ltd Dongguan Sino Crystal Semiconductor Co., Ltd Atecom Technology Co., Ltd CorEnergy Semiconductor Co. Ltd Air Water Inc Xiamen Powerway Advanced Material Co., Ltd Ceramicforum Co., Ltd
1 GaN Epitaxial Wafers Market Overview 1.1 GaN Epitaxial Wafers Product Scope 1.2 GaN Epitaxial Wafers Segment by Type 1.2.1 Global GaN Epitaxial Wafers Sales by Type (2016 & 2021 & 2027) 1.2.2 MOCVD Method 1.2.3 MBE Method 1.3 GaN Epitaxial Wafers Segment by Application 1.3.1 Global GaN Epitaxial Wafers Sales Comparison by Application (2016 & 2021 & 202
