This report focuses IGBT based STATCOM. This report studies the Gate Bipolar Transistors STATCOM market status and outlook of global and major regions, from angles of manufacturers, regions, product types and end industries; this report analyzes the top manufacturers in global and major regions, and splits the Gate Bipolar Transistors STATCOM market by product type and applications/end industries. The global Gate Bipolar Transistors STATCOM market is valued at USD 690.3 million in 2017 and is expected to reach USD1074.3 million by the end of 2025, growing at a Growth Rate of 5.68%between 2017 and 2025. The major players in global Gate Bipolar Transistors STATCOM market include ABB Siemens Rongxin Sieyuan Electric Hitachi Mitsubishi Electric S&C Electric GE AMSC Ingeteam Beijing In-power Electric Co., Ltd Comsys AB Merus Power Geographically, this report is segmented into several key Regions, with production, consumption, revenue, market share and growth rate of Gate Bipolar Transistors STATCOM in these regions, from 2013 to 2025 (forecast), covering North America Europe China Japan Other On the basis by type, this report covers Low Voltage STATCOM High Voltage STATCOM On the basis on the end users/applications, this report covers Renewable Energy Electric Utilities Industrial & Manufacturing Others
Table of Contents 1 Gate Bipolar Transistors STATCOM Market Overview 1 1.1 Product Overview and Scope of Gate Bipolar Transistors STATCOM 1 1.2 Gate Bipolar Transistors STATCOM Segment by Types (Product Category) 4 1.2.1 Global Gate Bipolar Transistors STATCOM Production (M Var) and Growth Rate (%) Comparison by Types (2013-2025) 4 1.2.2 Global Gate Bipolar Transistors STATCOM Production Ma
