Summary Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen. The global SiC Substrates market will reach xxx Million USD in 2019 with CAGR xx% 2019-2025. The main contents of the report including: Global market size and forecast Regional market size, production data and export & import Key manufacturers profile, products & services, sales data of business Global market size by Major Application Global market size by Major Type Key manufacturers are included based on company profile, sales data and product specifications etc.: Cree (Wolfspeed) ROHM (sicrystal) II?VI Advanced Materials Dow Corning NSSMC SICC Materials Co., Ltd TankeBlue Semiconductor Norstel Major applications as follows: LED lighting IT & Consumer Automotive Others Major Type as follows: 2 inch/3 inch 4 inch 6 inch Regional market size, production data and export & import: Asia-Pacific North America Europe South America Middle East & Africa
Table of Contents 1 Global Market Overview 1.1 Scope of Statistics 1.1.1 Scope of Products 1.1.2 Scope of Manufacturers 1.1.3 Scope of Application 1.1.4 Scope of Type 1.1.5 Scope of Regions/Countries 1.2 Global Market Size 2 Regional Market 2.1 Regional Production 2.2 Regional Demand 2.3 Regional Trade 3 Key Manufacturers 3.1 Cree (Wo
