Summary Resistive random-access memory is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. This technology bears some similarities to conductive-bridging RAM (CBRAM), and phase-change memory (PCM). Market Segment as follows: By Region Asia-Pacific North America Europe South America Middle East & Africa By Type 180 nm 40nm Others By Application Computer IoT Consumer Electronics Medical Others By Company Adesto PSCS Crossbar Fujitsu Intel Samsung Electronics TSMC Micron SK Hynix SMIC 4DS Memory Weebit Nano The main contents of the report including: Section 1: Product definition, type and application, global and regional market overview; Section 2: Global and regional Market competition by company; Section 3: Global and regional sales revenue, volume and price by type; Section 4: Global and regional sales revenue, volume and price by application; Section 5: Regional export and import; Section 6: Company information, business overview, sales data and product specifications; Section 7: Industry chain and raw materials; Section 8: SWOT and Porter's Five Forces; Section 9: Conclusion.
Table of Contents 1 Market Overview 1.1 Market Segment Overview 1.1.1 Product Definition 1.1.2 Market by Type 1.1.2.1 180 nm 1.1.2.2 40nm 1.1.2.3 Others 1.1.3 Market by Application 1.1.3.1 Computer 1.1.3.2 IoT 1.1.3.3 Consumer Electronics 1.1.3.4 Medical 1.1.3.5 Others 1.
