Resistive random-access memory is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. This technology bears some similarities to conductive-bridging RAM (CBRAM), and phase-change memory (PCM). LPI (LP Information)' newest research report, the ﾓResistive Random Access Memory Industry Forecastﾔ looks at past sales and reviews total world Resistive Random Access Memory sales in 2022, providing a comprehensive analysis by region and market sector of projected Resistive Random Access Memory sales for 2023 through 2029. With Resistive Random Access Memory sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Resistive Random Access Memory industry. This Insight Report provides a comprehensive analysis of the global Resistive Random Access Memory landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Resistive Random Access Memory portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firmsﾒ unique position in an accelerating global Resistive Random Access Memory market. This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Resistive Random Access Memory and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Resistive Random Access Memory. The global Resistive Random Access Memory market size is projected to grow from US$ 4509.3 million in 2022 to US$ 96840 million in 2029; it is expected to grow at a CAGR of 55.0% from 2023 to 2029. Japan is the major region of the global market, which takes about 60% market share. This report presents a comprehensive overview, market shares, and growth opportunities of Resistive Random Access Memory market by product type, application, key players and key regions and countries. Market Segmentation: Segmentation by type 180 nm 40nm Others Segmentation by application Computer IoT Consumer Electronics Medical Others This report also splits the market by region: Americas United States Canada Mexico Brazil APAC China Japan Korea Southeast Asia India Australia Europe Germany France UK Italy Russia Middle East & Africa Egypt South Africa Israel Turkey GCC Countries The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration. PSCS Adesto Crossbar Fujitsu Intel Samsung Electronics TSMC Micron SK Hynix SMIC 4DS Memory Weebit Nano
1 Scope of the Report 1.1 Market Introduction 1.2 Years Considered 1.3 Research Objectives 1.4 Market Research Methodology 1.5 Research Process and Data Source 1.6 Economic Indicators 1.7 Currency Considered 1.8 Market Estimation Caveats 2 Executive Summary 2.1 World Market Overview 2.1.1 Global Resistive Random Access Memory Market Size 2018-2029
